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Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements

Authors

  • Rukshan M. Tanthirige Email Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA
  • Carlos Garcia National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
  • Saikat Ghosh Kunming University of Science and Technology, Kunming 650500, China
  • Frederick Jackson II Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA
  • Jawnaye Nash Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA
  • Daniel Rosenmann Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA
  • Ralu Divan Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA
  • Liliana Stan Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA
  • Anirudha V. Sumant Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA
  • Stephen A. McGill National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
  • Paresh C. Ray Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA
  • Nihar R. Pradhan Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA; National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA

DOI:

https://doi.org/10.30564/ssid.v1i2.1526
Received: 4 December 2019 | Published Online: 16 April 2020

Abstract

We report intrinsic photoconductivity studies on one of the least examined
layered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistors
were fabricated on the Si/SiO2 substrate and photoconductivity measure
ments were performed using both two- and four-terminal configurations
under the illumination of 532 nm laser source. We measured photocurrent
as a function of the incident optical power at several source-drain (bias)
voltages. We observe a significantly large photoconductivity when mea
sured in the multiterminal (four-terminal) configuration compared to that
in the two-terminal configuration. For an incident optical power of 90
nW, the estimated photosensitivity and the external quantum efficiency
(EQE) measured in two-terminal configuration are 0.5 A/W and 120%,
respectively, under a bias voltage of 650 mV. Under the same conditions,
the four-terminal measurements result in much higher values for both the
photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This
significant improvement in photoresponsivity and EQE in the four-ter
minal configuration may have been influenced by the reduction of contact
resistance at the metal-semiconductor interface, which greatly impacts the
carrier mobility of low conducting materials. This suggests that photocon
ductivity measurements performed through the two-terminal configuration
in previous studies on ZrS2 and other 2D materials have severely underes
timated the true intrinsic properties of transition metal dichalcogenides and
their remarkable potential for optoelectronic applications.

Keywords:

Field-effect transistors, Zirconium sulphide, Phototransistor, Responsivity, Quantum efficiency

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2019 Vol.1 No.2

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Copyright © 2020 Rukshan M. Tanthirige, Carlos Garcia, Saikat Ghosh, Frederick Jackson II, Jawnaye Nash, Daniel Rosenmann, Ralu Divan, Liliana Stan, Anirudha V. Sumant, Stephen A. McGill, Paresh C. Ray, Nihar R. Pradhan

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